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≤ 0.fifteen) is epitaxially developed over a SOI substrate. A thinner layer of Si is grown on this SiGe layer, after which the construction is cycled via oxidizing and annealing levels. Due to the preferential oxidation of Si around Ge [sixty eight], the original Si1–s in biaxially compressive strained QWs from Shubnikov-de Haas or cyclotron re